Uma referência de tensão CMOS integrada utilizando transistor composto cascode e diodo Schottky

Abstract

This work shows a study of temperature behavior of self-cascode composite transistors (SCCTs) and Schottky diode in order to generate both PTAT and CTAT voltages of a temperature-compensated voltage reference. The SCCTs study also shows that it is possible to obtain a compensated voltage with a proper sizing and biasing of the SCCT. The voltage reference was designed based on achieved results and it was fabricated in a 130 nm CMOS process. The circuit occupies an area of 67.98 μm x 161.7 μm and it was measured in temperature and power-supply variation. A trimming circuit also is added to the reference in order to adjust the temperature coefficient (TC). The averaged output voltage is 720 mV with a VDD of 1.1 V. The averaged TC is 56 ppm/ºC in a temperature range of -40 to 85 ºC. The circuit works in a power-supply range of 1.1 to 2.5 V and its power consumption is 750 nW.