Caracterização de efeitos ambientais no desempenho de células solares bem como sua modelagem e ajustes

Abstract

The growing interest in solar photovoltaic (PV) energy demands a deep understanding of module performance under real operating conditions, which often diverge from standard test conditions. This work presents a robust methodology for characterizing and modeling the electrical behavior of four distinct PV module technologies: multicrystalline silicon (mSi), cadmium telluride (CdTe), copper indium gallium selenide (CIGS), and heterojunction (HIT). The main objective was to investigate the dependence of thermal and irradiance coefficients on photovoltaic modules, so that the models can be employed in future performance estimates of photovoltaic arrays under different climatic conditions, examining the dependence of the five parameters of the single diode model (SDM) as a function of irradiance and temperature. To this end, experimental data from currentvoltage I-V curves and a meta-heuristic optimization algorithm—the Self-Adaptive Differential Evolution (SADE)—were used to extract the model parameters with high precision. The results of the analysis of the temperature coefficients of the electrical parameters reveal significant differences in the thermal behavior of the distinct photovoltaic technologies, reflecting their physical properties and carrier transport and recombination mechanisms. The photogenerated current (𝐼𝑝ℎ) exhibits positive or slightly negative coefficients, indicating a moderate increase in current with temperature, more pronounced in CdTe and mSi and less significant in CIGS. The saturation current (𝐼0) shows strong thermal dependence in all technologies, contributing to the reduction in open-circuit voltage, with greater sensitivity observed in CIGS and mSi. The ideality factor (𝑛) decreases with increasing temperature, with HIT technology being the most affected, indicating more intense changes in recombination mechanisms. Among the resistive parameters, the series resistance (𝑅𝑠) tends to decrease in CdTe and mSi, while it increases in CIGS and HIT, suggesting a greater impact of ohmic losses in these technologies. The shunt resistance (𝑅𝑠ℎ) decreases with temperature in all cases, indicating the intensification of parallel losses, especially in HIT. These results highlight the importance of considering the specific thermal dependence of each technology for more realistic modeling and performance prediction under operating conditions. The irradiance coefficients reveal clear differences in electrical behavior among the photovoltaic technologies. The photogenerated current (𝐼𝑝ℎ) shows the highest sensitivity to irradiance in the HIT module, reflecting its high quantum efficiency and low recombination, while CdTe exhibits the lowest response. The saturation current (𝐼0) shows reduced variations, being more stable in HIT and more sensitive in CdTe and CIGS, associated with higher defect density. The ideality factor (𝑛) decreases with irradiance in CdTe and CIGS, indicating a reduction in non-ideal mechanisms, while it remains practically constant in HIT. The series (𝑅𝑠) and shunt (𝑅𝑠ℎ) resistances tend to decrease with increasing irradiance, with more pronounced variations in mSi and CIGS, whereas HIT shows greater stability, consistent with its heterojunction structure and lower influence of leakage paths. Thus, the proposed methodology, based on precise parameter extraction through the SADE algorithm, proves suitable for capturing such dependencies and provides a consistent basis for more realistic modeling and prediction of the performance of PV modules and arrays under real climatic conditions. The results obtained in this study contribute significantly to the literature by providing specific quantitative data that enhance the accuracy of simulation models. Furthermore, the evidence presented reinforces the potential of the method for improving the design and optimization of photovoltaic systems operating under real climatic conditions.