Resumo:
This work presents an alternative THz-modulator, using a low-loss slotted waveguide.
The interaction between THz-signal and the optical carrier wave is performed along the
modulator length, which is substantially greater than the conventional bi-dimension modulators.
Two different structures were studied in order to obtain the modulator: a silicon
based photo-excited waveguide, and a graphene based electrically controlled waveguide.
The modulation depth is greater than 10 dB with a 200 GHz of bandwidth, enabling the
device to telecommunication operations in THz frequencies. Moreover, this works results
in an integrated silicon on insulator compatible design.
